First Production of Photodiodes

First germanium-tin (GeSn) photodiodes operating in the short-wave infrared (SWIR) – in a row of 4 pixels, each comprising 4 SPADs – were fabricated at EPFL. They are currently being characterized at The Quantum Technology Group, Geneva University.

2021-08-07T14:22:10+02:00May 30th, 2021|

Detector Packaging Ready

The HE-Arc Engineering team – with support of our friends at APTASIC – produced the first packaging of our detector. For testing purposes, it contains a high performance Peltier module.

2021-07-31T11:16:48+02:00November 30th, 2020|

THz Spectroscopy of GeSn-on-Ge Samples

THz spectroscopy studies performed at Manchester University on GeSn-on-Ge samples show good results in terms of carrier lifetime and mobility. These values confirm the excellent performance of the GeSn alloy, even with a low fraction of Sn. In particular, with 3% […]

2021-07-30T18:15:27+02:00August 30th, 2020|

LiDAR Modelling Results

The feasibility of a flash LiDAR for autonomous ground vehicles could be demonstrated by simulations. The main conclusion may be summarized as follows:  the combined effect of the coincidence method and the 3 times higher quantum efficiency of the Ge0.98Sn0.02 alloy @ 1550nm compared to pure Ge, means that the maximum laser power can be […]

2021-08-02T08:44:07+02:00October 10th, 2019|

Advisory Board

We have the pleasure to report that Bruno Mourey, former CTO and CEO ad interim at CEA-Leti, has joined IRIS as Advisor to the Board. Bruno brings a unique experience and will be an active participant to leverage IRIS technologies and expertise in the fields of optics & photonics and 3D integration.

2019-05-29T14:55:19+02:00May 15th, 2019|

New Patent filed (9)

European Patent Office acknowledged receipt of our request for the processing of the following international application:

Application number: PCT/EP2019/056961

Inventors: Andrea Giunto/ Anna Fontcuberta Morral/ Marcelo Gonzalez Alanís/ Ignasi Mundó Tijeras

Applicant: IRIS Industries SA

Title: Optical conversion layer for semiconductor photodetectors and light emitters, and fabrication methods thereof

2019-03-20T16:25:13+01:00March 20th, 2019|

New Patent filed (8)

European Patent Office acknowledged receipt of our request for the processing of the following application:

Application number: EP1812804.1

Inventor: Claude Meylan

Applicant: IRIS Industries SA

Title: Fabrication method of GeSn alloys with high tin composition and semiconductor laser realized with such method

2018-12-21T10:28:51+01:00December 14th, 2018|

Innosuisse Support

The Swiss Innovation Council “Innosuisse” has approved our funding application entitled “Lid”. IRIS was able to gather around its project first-class partners, such as EPFL, METAS and HE-Arc. The goal of the project is to demonstrate that a semiconductor flash LiDAR with a rugged assembly for expedited automotive certification can operate in the SWIR up […]

2018-11-01T15:06:56+01:00October 29th, 2018|
Load More Posts
Go to Top